Korotkova, I. V.Sakhno, T. V.Drobit‘ko, I.K.Sakhno, Yu.Ostapenko, N.Короткова, Ірина ВалентинівнаСахно, Тамара Вікторівна2019-03-192019-03-192010https://dspace.pdau.edu.ua/handle/123456789/4418In this work the effects of solvent polarity and conformation changing on the electronic characteristics of poly(di-n-hexylsilane) incorporated in the nanoporous materials are calculated. The dependence of energy levels of electronic-excited states of investigated compounds is analyzed as a function of the Si–Si–Si–Si twist angle and length of Si–Si and Si–C bonds. The possibility of complex formation between silicon atom of polymer and oxygen ions of nanoporous materials is shown.enNanoporous materials, poly(di-n-hexylsilanes), twist angle, oscillator strength, Kirkwood–Onzager constantArticledoi.org/10.1016/j.chemphys.2010.06.029