Structure of poly(di-n-hexylsilane) in nanoporous materials
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Дата
2010
Автори
Korotkova, I. V.
Sakhno, T. V.
Drobit‘ko, I.K.
Sakhno, Yu.
Ostapenko, N.
Короткова, Ірина Валентинівна
Сахно, Тамара Вікторівна
Сахно, Ю. Е.
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Назва тому
Видавець
Сhemical Physics
Анотація
In this work the effects of solvent polarity and conformation changing on the electronic characteristics of
poly(di-n-hexylsilane) incorporated in the nanoporous materials are calculated. The dependence of
energy levels of electronic-excited states of investigated compounds is analyzed as a function of the
Si–Si–Si–Si twist angle and length of Si–Si and Si–C bonds. The possibility of complex formation between
silicon atom of polymer and oxygen ions of nanoporous materials is shown.
Опис
Ключові слова
Nanoporous materials, poly(di-n-hexylsilanes), twist angle, oscillator strength, Kirkwood–Onzager constant