Structure of poly(di-n-hexylsilane) in nanoporous materials

dc.contributor.author	Korotkova, I. V.
dc.contributor.author	Sakhno, T. V.
dc.contributor.author	Drobit‘ko, I.K.
dc.contributor.author	Sakhno, Yu.
dc.contributor.author	Ostapenko, N.
dc.contributor.author	Короткова, Ірина Валентинівна
dc.contributor.author	Сахно, Тамара Вікторівна
dc.contributor.author	Сахно, Ю. Е.
dc.date.issued	2010
dc.description.abstract	In this work the effects of solvent polarity and conformation changing on the electronic characteristics of poly(di-n-hexylsilane) incorporated in the nanoporous materials are calculated. The dependence of energy levels of electronic-excited states of investigated compounds is analyzed as a function of the Si–Si–Si–Si twist angle and length of Si–Si and Si–C bonds. The possibility of complex formation between silicon atom of polymer and oxygen ions of nanoporous materials is shown.	uk_UA
dc.identifier.doi	doi.org/10.1016/j.chemphys.2010.06.029
dc.identifier.uri	https://dspace.pdau.edu.ua/handle/123456789/4418
dc.language.iso	en	uk_UA
dc.publisher	Сhemical Physics	uk_UA
dc.relation.ispartofseries	;V. 374. – P.90-103
dc.subject	Nanoporous materials, poly(di-n-hexylsilanes), twist angle, oscillator strength, Kirkwood–Onzager constant	uk_UA
dc.title	Structure of poly(di-n-hexylsilane) in nanoporous materials	uk_UA
dc.title.alternative	Structure of poly(di-n-hexylsilane) in nanoporous materials	uk_UA
dc.type	Article	uk_UA

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