Structure of poly(di-n-hexylsilane) in nanoporous materials

dc.contributor.authorKorotkova, I. V.
dc.contributor.authorSakhno, T. V.
dc.contributor.authorDrobit‘ko, I.K.
dc.contributor.authorSakhno, Yu.
dc.contributor.authorOstapenko, N.
dc.contributor.authorКороткова, Ірина Валентинівна
dc.contributor.authorСахно, Тамара Вікторівна
dc.date.accessioned2019-03-19T18:41:54Z
dc.date.available2019-03-19T18:41:54Z
dc.date.issued2010
dc.description.abstractIn this work the effects of solvent polarity and conformation changing on the electronic characteristics of poly(di-n-hexylsilane) incorporated in the nanoporous materials are calculated. The dependence of energy levels of electronic-excited states of investigated compounds is analyzed as a function of the Si–Si–Si–Si twist angle and length of Si–Si and Si–C bonds. The possibility of complex formation between silicon atom of polymer and oxygen ions of nanoporous materials is shown.uk_UA
dc.identifier.doidoi.org/10.1016/j.chemphys.2010.06.029
dc.identifier.urihttps://dspace.pdau.edu.ua/handle/123456789/4418
dc.language.isoenuk_UA
dc.publisherСhemical Physicsuk_UA
dc.relation.ispartofseries;V. 374. – P.90-103
dc.subjectNanoporous materials, poly(di-n-hexylsilanes), twist angle, oscillator strength, Kirkwood–Onzager constantuk_UA
dc.titleStructure of poly(di-n-hexylsilane) in nanoporous materialsuk_UA
dc.title.alternativeStructure of poly(di-n-hexylsilane) in nanoporous materialsuk_UA
dc.typeArticleuk_UA
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